The gf180mcu process uses salicide to reduce the resistance of diffusion and poly.
This has the consequence of causing abutting diffusion with different implants (N+ and P+) to be electrically shorted. Without salicide, this junction would form a diode, but with salicide they are the same potential.
The Chipathon2025 had a design with abutting diffusion of different potentials that was not detected by magic extraction.
One suggestion is to change
connect
nwell,*nsd,*mvnsd,nbase,dnwell nwell,*nsd,*mvnsd,nbase,dnwell
pwell,*psd,*mvpsd,pbase,isosub pwell,*psd,*mvpsd,pbase,isosub
*psd,*mvpsd *psd,*mvpsd
*m1 *m1
to
connect
nwell,*nsd,*mvnsd,nbase,dnwell nwell,*nsd,*mvnsd,nbase,dnwell
pwell,*psd,*mvpsd,pbase,isosub pwell,*psd,*mvpsd,pbase,isosub
*psd,*mvpsd *psd,*mvpsd
*nsd,*mvnsd,*psd,*mvpsd *nsd,*mvnsd,*psd,*mvpsd
*m1 *m1
Unrelated question:
Isn't the connectivity in
included in this line?
pwell,*psd,*mvpsd,pbase,isosub pwell,*psd,*mvpsd,pbase,isosub